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description m PC8103T and m pc8108t are silicon monolithic integrated circuits designed as mixer-oscillator series for pager system. due to 1 v supply voltage, these ics are suitable for low voltage pager system. these ics are packaged in 6 pin mini mold suitable for high-density surface mounting. these ics are manufactured using necs 20 ghz f t nesat tm iii silicon bipolar process. this process uses silicon nitride passivation film and gold electrodes. these materials contributes excellent dc, ac perform- ance. thus, these ics are utilized as 1 v voltage ics. features ? 1 v supply voltage: v cc = 1.0 v to 2.0 v ? low current consumption m PC8103T: l cc = 1.0 ma typ. @ v cc = 1.0 v m pc8108t: l cc = 1.5 ma typ. @ v cc = 1.0 v ? wide band operation m PC8103T: f rf = 150 mhz to 330 mhz m pc8108t: f rf = 150 mhz to 930 mhz ? high-density surface mounting: 6 pin mini mold ordering information part number package supplying form m PC8103T-e3 6pin mini mold embossed tape 8 mm wide, pin 1, 2, 3 face to perforation side of m pc8108t-e3 tape. qty 3 kp/reel note to order evaluation samples, please contact your local nec sales office. (order number: m PC8103T, m pc8108t) pin connection caution electro-static sensitive devices bipolar analog integrated circuits m PC8103T, m pc8108t mixer + oscillator ic for pager system document no. ic-3450 (o.d. no. ic-8980) date published july 1995 p printed in japan (top view) 3 2 1 4 5 6 (bottom view) 3 2 1 4 5 6 markings PC8103T: c2c pc8108t: c2f m m 1 : rf input 2 : gnd 3 : osc emitter 4 : osc base 5 : v cc 6 : if output c2c 1995 data sheet
m PC8103T, m pc8108t 2 internal bolock diagram (in common) bias 4 5 6 3 2 1 system application example as pager pc8102t m bpf PC8103T m bpf if 150 mhz to 330 mhz low noise transistor bpf pc8108t m bpf if 450 mhz to 930 mhz this system application example schematically presents the chip set product line-up only, and does not imply a detail application circuit (in the case of application circuit example for m PC8103T and m pc8108t, please refer to page 21). for details on the related devices, refer to the latest data sheet of each device. note resonator must be externally equipped with 3 and 4 pins. (refer to pin explanations)
m PC8103T, m pc8108t 3 pin explanation ( m PC8103T, m pc8108t in common) pin no. 1 2 3 4 5 6 pin name rf input gnd osc emitter osc base v cc if output supply voltage (v) 0 1.0 to 2.0 same bias as v cc through external inductor (l) pin voltage (v) 0.77 0.19 0.95 function and application rf input for mixer. this port is low impedance. this ground pin must be connected to the system ground with minimum inductance. ground pattern on the board should be formed as wide as possible. track length should be kept as short as possible. emitter, base pins of internal transistor for oscillator. these pins should be exter- nally equipped with resonator circuit of xtal or lc. supply voltage pin. connect bypass capacitor (eg 1 000 pf) to minimize ground impedance. if output pin from mixer. this pin is designed as open collector and should be equipped with inductor (l) because of high impedance port. equivalent circuit 4 3 2 1 6 5 note each pin voltage is measured with v cc = 1.0 v.
PC8103T , pc8108t 4 unless otherwise specified, both product in common. absolute maximum ratings parameter symbol rating unit conditions supply voltage v cc 4.0 v t a = +25 c, pin 5 and 6 power dissipation p d 280 mw mounted on 50 50 1.6 mm double copper clad epoxy glass pwb at t a = +85 c operating temperature t a - 40 to +85 c storage temperature t stg - 55 to +150 c if output voltage peak level v ifout max. 5v t a = +25 c recommended operating conditions parameter symbol min. typ. max. unit note supply voltage v cc 1.0 1.05 2.0 v pin 5 and 6 operating temperature t a - 25 +25 +75 c possible to oscillate rf frequency f rf 150 330 mhz m pd8103t rf frequency f rf 150 930 mhz m pd8108t electrical characteristics (t a = +25 ?c, v cc = 1.0 v, z s = 50 w , z l = 2 k w , f if = 20 mhz, p loin = - 21 dbm externally, upper local note ) parameter symbol m PC8103T m pc8108t unit conditions min. typ. max. min. typ. max. circuit current i cc 0.55 1 1.4 1.0 1.5 2.1 ma no input signals conversion gain 1 cg1 13 16 19 17.5 20.5 23.5 db f rfin = 150 mhz, test circuit 1 conversion gain 2 cg2 12.5 15.5 18.5 17 20 23 db f rfin = 280 mhz, test circuit 1 conversion gain 3 cg3 12.5 15.5 18.5 17 20 23 db f rfin = 330 mhz, test circuit 1 conversion gain 4 cg4 e e e 16 19 22 db f rfin = 450 mhz, test circuit 1 conversion gain 5 cg5 e e e 12 15 18 db f rfin = 930 mhz, test circuit 1 note upper local means ?f if = f loin e f rfin ?. m m
m PC8103T, m pc8108t 5 standard characteristics for reference (t a = +25 ?c, v cc = 1.0 v, z s = z l = 50 w , f if = 20 mhz, p loin externally, upper local) parameter symbol m PC8103T m pc8108t unit conditions p loin =p loin =p loin =p loin = C21 dbm C10 dbm C21 dbm C10 dbm noise figure 1 nf1 13 9 13 8.5 db f rfin = 150 mhz, test circuit 2 noise figure 2 nf2 11.5 8 12 7 db f rfin = 280 mhz, test circuit 2 noise figure 3 nf3 12 9 13 8 db f rfin = 330 mhz, test circuit 2 noise figure 4 nf4 C C 13.5 8 db f rfin = 450 mhz, test circuit 2 noise figure 5 nf5 C C 18 11.5 db f rfin = 930 mhz, test circuit 2 note upper local means f if = f loin C f rfin .
m PC8103T, m pc8108t 6 test circuit 1 r s = 50 w , r l = 2 k w (cg measurement) 1 000 pf nc 3 2 1 4 5 6 1 000 pf 1 000 pf 3 300 pf 1 000 pf v cc 2 k w * 1 000 pf 50 w c2c 150 h m 50 w c2 c1 50 w c6 r l c3 c4 c5 signal generator (lo) supplement: (50 w means impedance of measurement equipment) signal generator (rf) spectrum analyser * note on 50 w measurement, this high inpedance ifout needs the calculatiuon as follows cg (db) = measured value +20 log 10 test circuit 2 r s = r l = 50 w (nf measurement) 1 000 pf nc 3 2 1 4 5 6 1 000 pf 3 300 pf 1 000 pf v cc 1 000 pf c2c 20 mhz m signal generator (lo) 50 w c2 c6 l c3 c4 c5 150 h 1 000 pf c1 50 w nf meter noise source 50 w 2 k w 50 w
m PC8103T, m pc8108t 7 illustration of test circuits assembled on evaluation board ex-lo if out b a d c rf in a b c d in out c6 c3 c4 c2 r l c5 c1 PC8103T 8108t surface (ic mounted pattern) backside (ground pattern) m note (*1) 35 42 0.4 mm double sided copper clad polyimide board (*2) solder plated pattern (*3) surface vs. backside : a - a, b - b, c - c, d - d (*4) should be removed. (*5) in the care of nf measurement, remove r and short. (*6) : through holes
m PC8103T, m pc8108t 8 characteristic curves (unless otherwise specified with test circuit 1 or 2) m PC8103T circuit current vs. supply voltage supply voltage v cc (v) 0 1 2 3 4 circuit current i cc (ma) 10 8 6 4 2 0 no signal circuit current vs. operating temperature operating temperature t a (?c) ?0 0 20 60 100 circuit current i cc (ma) ?0 40 80 8 7 6 5 4 3 2 1 0 v cc = 1.0 v v cc = 1.5 v v cc = 2.0 v rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 v cc = 0.9 v v cc = 1.0 v v cc = 1.5 v v cc = 2.0 v rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 v cc = 0.9 v v cc = 1.0 v v cc = 1.5 v v cc = 2.0 v no signal v cc = 0.9 v
m PC8103T, m pc8108t 9 m PC8103T rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.0 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a =+85 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.0 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = +25 ?c t a = +85 ?c t a = ?0 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 0.9 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c t a = +25 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 0.9 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c t a = +25 ?c
m PC8103T, m pc8108t 10 m PC8103T rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 2.0 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c t a = +25 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 2.0 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c t a = +25 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.5 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c t a = +25 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.5 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c t a = +25 ?c
m PC8103T, m pc8108t 11 m PC8103T local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 0.9 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 150 mhz local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 450 mhz f rfin = 280 mhz local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.5 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 280 mhz f rfin = 900 mhz f rfin = 150 mhz local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 2.0 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 280 mhz f rfin = 900 mhz f rfin = 450 mhz f rfin = 280 mhz f rfin = 900 mhz f rfin = 150 mhz f rfin = 450 mhz f rfin = 900 mhz f rfin = 150 mhz f rfin = 450 mhz
m PC8103T, m pc8108t 12 m PC8103T local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v p rfin = ?5 dbm f rfin = 150 mhz f loin = 170 mhz ?5 t a = +25 ?c 25 20 15 10 5 0 ? t a = +85 ?c t a = ?0 ?c local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v p rfin = ?5 dbm f rfin = 280 mhz f loin = 300 mhz ?5 t a = +25 ?c 25 20 15 10 5 0 ? t a = +85 ?c t a = ?0 ?c t a = ?0 ?c rf frequency vs. noise figure rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 noise figure nf (db) p loin = ?1 dbm f if = 20 mhz upper local 20 15 10 5 0 v cc = 1.0 v v cc = 1.5 v rf frequency vs. noise figure 0.1 0.3 0.5 1 p loin = ?0 dbm f if = 20 mhz upper local 20 15 10 5 0 v cc = 1.0 v v cc = 1.5 v rf input frequency f rfin (ghz) noise figure nf (db) t a = ?0 ?c
m PC8103T, m pc8108t 13 m PC8103T rf input level vs. if output level and im 3 rf input level p rfin (dbm) ?0 ?0 ?0 ?0 if output level of each tone p if (dbm) 3rd order intermodelation distortion level im 3 (dbm) +10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 im 3 if out v cc = 1.0 v f loin = 170 mhz p loin = ?1 dbm f rfin (des) = 150.0 mhz f rfin (undes) = 150.5 mhz test circuit 1 rf input level vs. if output level and im 3 ?0 ?0 ?0 ?0 +10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 im 3 if out v cc = 1.0 v f loin = 300 mhz p loin = ?1 dbm f rfin (des) = 280.0 mhz f rfin (undes) = 280.5 mhz test circuit 1 rf input level p rfin (dbm) if output level of each tone p if (dbm) 3rd order intermodelation distortion level im 3 (dbm)
m PC8103T, m pc8108t 14 m pc8108t circuit current vs. supply voltage supply voltage v cc (v) 0 1 2 3 4 circuit current i cc (ma) 14 12 10 8 6 4 2 0 no sigual circuit current vs. operating temperature operating temperature t a (?c) ?0 ?0 0 20 100 circuit current i cc (ma) 10 9 8 7 6 5 4 3 2 1 0 v cc = 1.0 v v cc = 1.5 v v cc = 2.0 v 40 60 80 rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 v cc = 0.9 v v cc = 1.0 v v cc = 1.5 v v cc = 2.0 v rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 v cc = 0.9 v v cc = 1.0 v v cc = 1.5 v v cc = 2.0 v no sigual v cc = 0.9 v
m PC8103T, m pc8108t 15 m pc8108t rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.0 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf frequency vs. conversion gain 0.1 0.3 0.5 1 v cc = 1.0 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf frequency vs. conversion gain 0.1 0.3 0.5 1 v cc = 0.9 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf frequency vs. conversion gain 0.1 0.3 0.5 1 v cc = 0.9 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf input frequency f rfin (ghz) conversion gain cg (db) rf input frequency f rfin (ghz) conversion gain cg (db) rf input frequency f rfin (ghz) conversion gain cg (db)
m PC8103T, m pc8108t 16 m pc8108t rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.5 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 1.5 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 2.0 v p loin = ?0 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c rf frequency vs. conversion gain rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 conversion gain cg (db) v cc = 2.0 v p loin = ?1 dbm p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 t a = ?0 ?c t a = ?0 ?c t a = +25 ?c t a = +85 ?c
m PC8103T, m pc8108t 17 m pc8108t local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 0.9 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 450 mhz f rfin = 150 mhz local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 450 mhz f rfin = 150 mhz f rfin = 280 mhz local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.5 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 450 mhz f rfin = 150 mhz f rfin = 280 mhz local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 2.0 v p rfin = ?5 dbm f if = 20 mhz upper local 35 30 25 20 15 10 5 0 ?5 f rfin = 450 mhz f rfin = 150 mhz f rfin = 280 mhz f rfin = 900 mhz f rfin = 280 mhz f rfin = 900 mhz f rfin = 900 mhz f rfin = 900 mhz
m PC8103T, m pc8108t 18 m pc8108t local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v f rfin = 280 mhz p rfin = ?5 dbm f loin = 170 mhz ?5 t a = +25 ?c 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v f rfin = 150 mhz p rfin = ?5 dbm f loin = 170 mhz ?5 t a = +25 ?c 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v f rfin = 450 mhz p rfin = ?5 dbm f loin = 470 mhz ?5 t a = +25 ?c 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c local input level vs. conversion gain local input level p loin (dbm) ?0 ?0 ?5 ?0 conversion gain cg (db) v cc = 1.0 v f rfin = 900 mhz p rfin = ?5 dbm f loin = 920 mhz ?5 t a = +25 ?c 30 25 20 15 10 5 0 t a = +85 ?c t a = ?0 ?c t a = ?0 ?c
m PC8103T, m pc8108t 19 m pc8108t rf frequency vs. noise figure rf input frequency f rfin (ghz) 0.1 0.3 0.5 1 noise figure nf (db) p loin = ?1 dbm f if = 20 mhz upper local 20 15 10 5 0 v cc = 1.5 v v cc = 1.0 v rf frequency vs. noise figure 0.1 0.3 0.5 1 p loin = ?0 dbm f if = 20 mhz upper local 20 15 10 5 0 v cc = 1.5 v v cc = 1.5 v v cc = 1.0 v v cc = 1.0 v rf input level vs. if output level and im 3 rf input level p rfin (dbm) ?0 ?0 ?0 ?0 if output level of each tone p if (dbm) 3rd order intermodulation distortion im 3 (dbm) +10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 im 3 v cc = 1.0 v f loin = 170 mhz p loin = ?1 dbm f rfin (des) = 150.000 mhz f rfin (undes) = 150.025 mhz test circuit 1 if out rf input level vs. if output level and im 3 ?0 ?0 ?0 ?0 +10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 im 3 v cc = 1.0 v f loin = 300 mhz p loin = ?1 dbm f rfin (des) = 280.000 mhz f rfin (undes) = 280.025 mhz test circuit 1 if out rf input frequency f rfin (ghz) noise figure nf (db) rf input level p rfin (dbm) if output level of each tone p if (dbm) 3rd order intermodulation distortion im 3 (dbm)
m PC8103T, m pc8108t 20 m pc8108t rf input level vs. if output level and im 3 ?0 ?0 ?0 ?0 +10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 im 3 v cc = 1.0 v f loin = 950 mhz p loin = ?1 dbm f rfin (des) = 930.000 mhz f rfin (undes) = 930.025 mhz test circuit 1 if out rf input level vs. if output level and im 3 rf input level p rfin (dbm) ?0 ?0 ?0 ?0 if output level of each tone p if (dbm) 3rd order intermodulation distortion im 3 (dbm) +10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 im 3 v cc = 1.0 v f loin = 470 mhz p loin = ?1 dbm f rfin (des) = 450.000 mhz f rfin (undes) = 450.025 mhz test circuit 1 if out rf input level p rfin (dbm) if output level of each tone p if (dbm) 3rd order intermodulation distortion im 3 (dbm)
m PC8103T, m pc8108t 21 application circuit example (in the case of m PC8103T) 1 000 pf v cc (1.05 v) c2 c1 3 2 1 4 5 6 c2c rf in (173.94 mhz, ?0 dbm) low impedance r1 4.3 k w l1 56 nh 11 pf c3 16 pf c4 8 pf 150 nh (68+82 nh) l2+l3 l4 c7 1 000 pf 150 h c6 1 000 pf c5 22 pf r2 4.3 k w 152.2400 mhz (overtone xtal) high impedance if out 21.7 mhz (kss 21.7-7a) x'tal bpf m illustration of application circuit assembled on evaluation board (ex-lo) if out b a d c rf in a b c d in out c7 c6 l2 l3 x'tal bpf PC8103T 8108t surface backside c4 c5 c2 c3 l1 r1 r2 c1 l4 m note (*1) 35 42 0.4 mm double copper clad polyimide board (*2) solder plated pattern (*3) surface vs. backside : a - a, b - b, c - c, d - d (*4) : through holes the application circuits and their parameters are for references only and are not intended for use in actual design-in's.
m PC8103T, m pc8108t 22 with application circuit ( m PC8103T) rf input level vs. if output level rf input level p rfin (dbm) ?0 ?0 ?0 ?0 0 if output level p if (dbm) 0 ?0 ?0 ?0 ?0 ?0 this measurement needs the calculation as same as test circuit 1. spectrum of overtone oscillation (without rf signal) 100 mhz res bw 1 mhz 10 db/ ref 0.0 dbm atten 10 db mkr 152.0 mhz ?2.30 dbm marker 152.0 mhz ?2.30 dbm center vbw 1 khz span 200 mhz swp 1.00 sec 2 ref. (desired osc freq.) 1 000 pf spectrum analyzer (@ no rf signal) ref. 5 4
m PC8103T, m pc8108t 23 6 pin mini mold package dimensions (unit : mm) 123 654 0.95 0.95 1.9 2.90.2 1.1 +0.2 C0.1 0.8 0 to 0.1 0.130.1 0.3 +0.1 C0.05 2.8 +0.2 C0.3 1.5 +0.2 C0.1
m PC8103T, m pc8108t 24 notes on correct use (1) observe precautions for handling because of electro-static sensitive devices. (2) form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent undesired oscillation). (3) keep the wiring length of the ground pins as short as possible. (4) connect a bypass capacitor (eg 1 000 pf) to the vcc pin. (5) insert the inductor (eg l = 150 m h) between 5 and 6 pins. recommended soldering conditions this product should be soldered in the following recommended conditions. other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. m PC8103T, m pc8108t note it is the storage days after opening a dry pack, the storage conditions are 25 ?c, less than 65 % rh. caution the combined use of soldering method is to be avoided (however, except the pin area heating method). for details of recommended soldering conditions for surface mounting, refer to information document semiconductor device mounting technology manual (iei-1207) soldering conditions package peak temperature: 235 ?c, hour: within 30 s. (more than 210 ?c), time: 2 time, limited days: no. note package peak temperature: 215 ?c, hour: within 40 s. (more than 200 ?c), time: 2 time, limited days: no. note soldering tub temperature: less than 260 ?c, hour: within 10 s. time: 1 time, limited days: no. note pin area temperature: less than 300 ?c, hour: within 10 s. limited days: no. note recommended condition symbol ir35-00-2 vp15-00-2 ws60-00-1 soldering process infrared ray reflow vps wave soldering pin part heating
m PC8103T, m pc8108t 25 [memo]
m PC8103T, m pc8108t 16 [memo] nesat (nec silicon advanced technology) is a trademark of nec corporation. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11

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